請幫忙翻譯下關(guān)于SiC反面的一個段落 謝謝了!
Intrinsic defects generated by ion implantation
strongly affect the annealing process in SiC. The
conducted coimplantation experiments reveal that
the electrical activation of implanted P donors is
predominantly governed by the site-competition
effect, while in case of implanted N donors the
formation of electrically neutral complexes
strongly reduces the donor activity. Negative-Ucenters
E1/E2
\1/+ and Z1/Z2
\1/+ are observed in
6H– and 4H–SiC under illumination with photons
of different energy. No negative-U-behavior is
detected for the corresponding defect center
Z1/Z2(3C) in 3C–SiC.
不是SiC反面是SiC方面的~!!著急打錯了~!!