英語(yǔ)翻譯
The experimental setup used for the etching is described in detail elsewhere.The GaN samples were illuminated during the etching by a 350 W Hg arc lamp with a typical intensity of 25 mW/cm2 at 365 nm.The electrolyte consisted of dilute aqueous solutions of KOH with concentrations in the range of 0.002–0.006 M.The solutions were magnetically stirred during the etching.The etch rate of the GaN under these conditions was approximately 25 nm/min.