(ii) The white sample was divided into four parts and separately wasobserved by SEM (Leo5420,10[1]20keV); by TEM (H-7100,120 keV; JEM-4000,400 keV) and by HRTEM.
(ii) 將白色樣品分為四份,分別用掃描電鏡（leo5420,10 20 keV）、透射電鏡（H-7100,120 keV；JEM -4000,400 keV）和高分辨透射電子顯微鏡觀察.
The compositionof the product was analyzed by energy dispersive X-ray (EDX,JEM-2010).
通過能量分散型X射線（EDX,JEM-2010）分析生成物的成分.
Luminescenceexperiments were carried out by exposing the SiO2 nanowires to X-rayirradiation using a Philips set to deliver a dose of 20 Gy•min−1.
通過飛利浦儀器提供20 Gy•min−1劑量將SiO2納米線置于X射線照射下進行了發(fā)光實驗.
Theluminescence emission of the sample was measured using a high-sensitivitymultiplexed system with F/2.2 optics developed.
用開發(fā)的帶F / 2.2光學(xué)器件的高靈敏度多路復(fù)用系統(tǒng)測量了樣品的熒光發(fā)射.
Experimentswere conducted at low (25 240 K,heating rate 6K•min−1)and high (293 673 K,heating rate 50 K•min−1)temperatures.
在低溫（25 240 K,加熱速率6K•min−1）和高溫（293 673 K,50 K•min−1）條件下進行了實驗.
2.Results anddiscussion
2.結(jié)果與討論
SEM (fig.2(a))image reveals the presence of white product on TiSi film.
掃描電鏡（圖2（a））圖像顯示TiSi膜上有白色生成物.
Under higherresolution,the white product consists of large quantities of wire-likematerials and these wires are winding,exhibiting smooth surface and uniformdiameter (ca.40 90 nm).
在更高分辨率的條件下（可以看出）,白色生成物由大量的絲狀材料構(gòu)成,且這些線是彎曲的,有光滑的表面和均勻的直徑（約40 90 nm）.
Further HRTEMexamination shows that the nanowires are amorphous (fig.2(c)) and EDX analysesindicate that they consist solely of silicon and oxygen (fig.2(d)).
用高分辨透射電子顯微鏡進行進一步檢查表明,納米線為非結(jié)晶的（圖2（c））,而能譜分析表明,他們只是由硅和氧（圖2（d））構(gòu)成的.
Computeranalyses exhibit that the Si O ratio is 1 2.Therefore,they are very longamorphous SiO2 nanowires.
計算機分析表明,Si與O的比率為1:2.因此,他們是很長的非結(jié)晶SiO2納米線.